2SC495, Toshiba
:
I
2SC496,
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : v CE(sat) .
2SC4953, Panasonic Semiconductor
Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2.
2SC4954, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain.
2SC4955, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain.
2SC4956, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise, Hi.
2SC4957, Renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
2SC4958, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4958
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
FEATURES
• • •
Low Nois.
