2SC495, Toshiba
:
I
2SC496,
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : v CE(sat) .
2SC4953, Panasonic Semiconductor
Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2.
2SC4954, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain.
2SC4955, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• Low Noise, High Gain.
2SC4956, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise, Hi.
2SC4957, NEC
DATA SHEET
SILICON TRANSISTOR
2SC4957
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise, Hi.
2SC4957, Renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
