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2SK2723 Datasheet - NEC

2SK2723 SWITCHING N-CHANNEL POWER MOS FET

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 * Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. * Low Ciss

2SK2723 Features

* 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Tempera

2SK2723_NEC.pdf

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Datasheet Details

Part number:

2SK2723

Manufacturer:

NEC

File Size:

83.96 KB

Description:

Switching n-channel power mos fet.

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2SK2723 2SK2723 SWITCHING N-CHANNEL POWER MOS FET NEC

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