2SK2723 - SWITCHING N-CHANNEL POWER MOS FET
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.
15.0 ± 0.3 3 ± 0.1 4 ± 0.2 * Low On-Resistance RDS (on) 1 = 40mΩ Max.
(VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.
(VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.
* Low Ciss
2SK2723 Features
* 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Tempera
