2SK3112
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3112 2SK3112-S 2SK3112-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ)
FEATURES
- Gate voltage rating ±30 V
- Low on-state resistance RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A)
- Low input capacitance Ciss = 1600 p F TYP. (VDS = 10 V, VGS = 0 V)
- Avalanche capability rated
- Built-in gate protection diode
- Surface mount device available (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 ±30 ±25 ±75 100 1.5 150
- 55 to +150 25 250
V V A A W W °C °C A m J (TO-263) (TO-262)
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel...
