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2SK3110 - N-Channel MOSFET

General Description

The 2SK3110 is N channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for high voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3110 PACKAGE Isolated TO-220 FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A) •Low input capacitance Ciss = 1000 pF TYP.