2SK3110 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3110 is N channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3110 PACKAGE Isolated TO-220 Features - Gate voltage rating ±30 V - Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A) - Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) - Built-in gate protection diode - Avalanche capability rated - Isolated TO-220...