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2SK3112 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3112 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for high voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3112 2SK3112-S 2SK3112-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ) FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A) • Low input capacitance Ciss = 1600 pF TYP.