2SK3112 Datasheet | NEC

.. DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3112 2SK3112-S 2SK3112-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ) Features - Gate voltage rating ±30 V - Low on-state resistance RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A) - Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) - Avalanche capability rated - Built-in gate protection diode - Surface mount...