2SK3115
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
- Low gate charge QG = 26 n C TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
- Gate voltage rating ±30 V
- Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
- Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK3115 PACKAGE Isolated TO-220
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 ±30 ±6.0 ±24 2.0 35 150
- 55 to +150 6.0 24
V V A A W W °C °C A m J
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10...
