* High gain 1.2 ±0.1
* Low noise
* 109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
* Ultra thin thickness package t = 0.3 mm TYP. 0.8 ±0.1
* 0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) 3 0 to 0.02 2 1 0.4 0.4 0.13
* 0.05 +0.1 ORDERING INFORMATION
2SK3782
NEC
143.93 KB
N-channel silicon junction field effect transistor.
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
www.DataSheet4U.com
2SK3782
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER .
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