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2SK660 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

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NEC

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2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – 2SK660

Datasheet Details

Part number	2SK660
Manufacturer	NEC
File Size	38.33 KB
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	2SK660 Datasheet
Additional preview pages of the 2SK660 datasheet.

Product details

Description

The 2SK660 is suitable for converter of ECM.

Features

Compact package.
High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA).
Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz).
Includes diode and high resistance at G - S.

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Published: Oct 8, 2005 |