2SK660 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
2SK660 Features
* Compact package
* High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
* Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
* Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABS
