2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

NEC

Description

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM .
The 2SK660 is suitable for converter of ECM. Compact package. High forward transfer admittance | yfs | = 1200 µS TYP.

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Datasheet Specifications

Part number: 2SK660
Manufacturer: NEC
File Size: 38.33 KB
Datasheet: 2SK660_NEC.pdf
Description: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

Features

* Compact package
* High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
* Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
* Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABS

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR NEC

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