2SK660 Datasheet - NEC

2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

2SK660 Features

* Compact package

* High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)

* Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)

* Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABS

Datasheet Details

2SK660

NEC

38.33 KB

N-channel silicon junction field effect transistor.

📁 Related Datasheet

2SK662 N-Channel MOSFET (Panasonic Semiconductor)

2SK662 Silicon N-Channel Junction FET (Panasonic Semiconductor)

2SK663 N-Channel MOSFET (Panasonic Semiconductor)

2SK663 Silicon N-Channel Junction FET (Panasonic Semiconductor)

2SK664 N-Channel MOSFET (Panasonic Semiconductor)

2SK664 Silicon N-Channel MOS FET (Panasonic Semiconductor)

2SK665 N-Channel MOSFET (Panasonic Semiconductor)

2SK665 Silicon MOS FETs (Panasonic Semiconductor)

TAGS

2SK660 Distributor