2SK663 - N-Channel MOSFET
Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 0 to 0.1 Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate curr
2SK663 Features
* 1 Silicon Junction FETs (Small Signal) PD Ta 240 5 Ta=25˚C 200 2SK663 ID VDS 10 Ta=25˚C ID VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 160 Drain current ID (mA) VGS=0V 3 VGS=0
* 0.2V 6
* 0.2V 120
* 0.4V 4
* 0.6V 2
