* 1 Silicon Junction FETs (Small Signal) PD Ta 240 5 Ta=25˚C 200 2SK663 ID VDS 10 Ta=25˚C ID VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 160 Drain current ID (mA) VGS=0V 3 VGS=0
* 0.2V 6
* 0.2V 120
* 0.4V 4
* 0.6V 2
2SK663
Panasonic Semiconductor
32.32 KB
N-channel mosfet.
Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425.
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