2SK663 Datasheet - Panasonic Semiconductor

2SK663 N-Channel MOSFET

Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 0 to 0.1 Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate curr.

2SK663 Features

* 1 Silicon Junction FETs (Small Signal) PD  Ta 240 5 Ta=25˚C 200 2SK663 ID  VDS 10 Ta=25˚C ID  VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 160 Drain current ID (mA) VGS=0V 3 VGS=0

* 0.2V 6

* 0.2V 120

* 0.4V 4

* 0.6V 2

2SK663 Datasheet (32.32 KB)

2SK663 Datasheet Preview — Preview of 2SK663 PDF

Datasheet Details

Part number:

2SK663

Manufacturer:

Panasonic Semiconductor

File Size:

32.32 KB

Description:

N-channel mosfet.

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2SK663 N-Channel MOSFET Panasonic Semiconductor

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