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2SK665 - N-Channel MOSFET

2SK665 Description

Silicon MOS FETs (Small Signal) 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s .

2SK665 Features

* q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipati

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N-Channel MOSFET Panasonic Semiconductor
Panasonic Semiconductor 2SK665-like datasheet