q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
2SK660, NEC
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
Th.
2SK662, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
s Features
q High mutual.
2SK662, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I Features
0..
2SK664, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q S-mini type pack.
2SK664, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
(0.425)
0.3+0.1 –0.0 3
0.15+0.10 –0..
2SK665, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
unit: mm
(0.425)
For switching I Features
0.3+0.1 –0.0 3
0.15+0.10 –0.0.
