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K2111 2SK2111

K2111 Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and i.

K2111 Features

* Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
* High switching speed ton + toff < 100 ns
* Low parasitic capacitance PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 SDG 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0

K2111 Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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Datasheet Details

Part number
K2111
Manufacturer
NEC
File Size
54.98 KB
Datasheet
K2111-NEC.pdf
Description
2SK2111

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2SK2111 NEC
NEC K2111-like datasheet