K2111 Datasheet, 2sk2111, NEC

K2111 Features

• 2sk2111
• Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed ton + toff < 100 ns
• Low parasitic capacitance PACKAGE DIMENSIONS (in

PDF File Details

Part number:

K2111

Manufacturer:

NEC

File Size:

54.98kb

Download:

📄 Datasheet

Description:

2sk2111.

K2111 Application

• Applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a

TAGS

K2111

NEC

📁 Related Datasheet

K2111 - MOS Field Effect Transistor (Kexin)
SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.5.

K2114 - 2SK2114 (Hitachi Semiconductor)
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.

K2115 - 2SK2115 (Hitachi Semiconductor)
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.

K210 - Silicon Zener Diodes (Aeroflex)
Silicon Zener Diodes Glass Axial Leaded Low Level, Very Low Voltage, Low Leakage Model K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .

K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Semiconductor)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.

K210 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse lea.

K210 - 2SK210 (Toshiba Semiconductor)
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power .

K2101 - 2SK2101 (Fuji Electric)
.. 2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondar.

K2128 - 2SK2128 (ETC)
.. Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS =.

K2129 - 2SK2129 (ETC)
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.