Part number:
K2983
Manufacturer:
NEC
File Size:
63.72 KB
Description:
2sk2983.
* Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
* Low Ciss Ciss = 1200 pF TYP.
* Built-in gate protection diode ORDERING INFOMATION PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263
K2983
NEC
63.72 KB
2sk2983.
📁 Related Datasheet
K2980 - Silicon N-Channel MOSFET
(Renesas)
2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate .
K2981 - 2SK2981
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2984 - 2SK2984
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2984
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-.
K2985 - 2SK2985
(Toshiba Semiconductor)
2SK2985
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2985
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit:.
K2986 - 2SK2986
(Toshiba Semiconductor)
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free D.
K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
K2902-01MR - 2SK2902-01MR
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
K2915 - 2SK2915
(Toshiba Semiconductor)
2SK2915
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor.