K2980, Renesas
2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate .
K2981, NEC
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2983, NEC
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2985, Toshiba Semiconductor
2SK2985
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2985
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit:.
K2900-01, Fuji Electric
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
K2902-01MR, Fuji Electric
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
K2915, Toshiba Semiconductor
2SK2915
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor.
