K2980 - Silicon N-Channel MOSFET
(Renesas)
2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate .
K2981 - 2SK2981
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2983 - 2SK2983
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effec.
K2985 - 2SK2985
(Toshiba Semiconductor)
2SK2985
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2985
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit:.
K2986 - 2SK2986
(Toshiba Semiconductor)
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free Datasheet http://.0PDF.
Free D.
K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.