NE27200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NEC

The NE27200 by NEC is a C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP. Below is the official datasheet preview.

📥 Download Datasheet

NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP by NEC - Datasheet Preview — Official preview page of the **NE27200** C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP datasheet (NEC).

Datasheet Details

Part number	NE27200
Manufacturer	NEC
File Size	39.82 KB
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet	NE27200_NEC.pdf
Additional preview pages of the NE27200 datasheet.

NE27200 Product details

Description

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Features

Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz.
Gate Length : Lg = 0.2 µm.
Gate Width : Wg = 200 µm.

📁 NE27200 Similar Datasheet

NE2001-VA20 - Near edge thermal printhead (8 dots / mm) (Rohm)
NE2001-VA20A - Near edge thermal printhead (8 dots / mm) (Rohm)
NE2002-VA10A - Near edge thermal printhead (8 dots / mm) (Rohm)
NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm) (Rohm)
NE202930 - Silicon NPN Epitaxial High Frequency Transistor (Renesas)
NE21935 - NPN SILICON HI FREQUNCY TRANSISTOR (Advanced)
NE22100 - (NE22120 / NE22100) NPN Medium Power / UHF-VHF Transistor (NEC Electronics)
NE22120 - (NE22120 / NE22100) NPN Medium Power / UHF-VHF Transistor (NEC Electronics)

Other Datasheets by NEC

NE202 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
NE20248 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
NE20283A - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
NE202XX - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
NE202XX-1.4 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
NE219 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Published: May 12, 2005 |