NE27200 Datasheet, Chip, NEC

NE27200 Features

  • Chip
  • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
  • Gate Length : Lg = 0.2 µm
  • Gate Width : Wg = 200 µm ORDERI

PDF File Details

Part number:

NE27200

Manufacturer:

NEC

File Size:

39.82kb

Download:

📄 Datasheet

Description:

C to ka band super low noise amplifier n-channel hj-fet chip. NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to crea

Datasheet Preview: NE27200 📥 Download PDF (39.82kb)
Page 2 of NE27200 Page 3 of NE27200

NE27200 Application

  • Applications FEATURES
  • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
  • Gate Le

TAGS

NE27200
BAND
SUPER
LOW
NOISE
AMPLIFIER
N-CHANNEL
HJ-FET
CHIP
NEC

📁 Related Datasheet

NE2001-VA20 - Near edge thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.

NE2001-VA20A - Near edge thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.

NE2002-VA10A - Near edge thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thermal printhead (8 dots / mm) NE2002-VA10A The NE2002–VA10A is a near edge thin–film thermal printhead, where the printing med.

NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thin film thermal printhead (8 dots / mm) NE2004-VA10A The NE2004–VA10A is a near edge thin–film thermal printhead, where the pr.

NE202 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE20248 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE20283A - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE202930 - Silicon NPN Epitaxial High Frequency Transistor (Renesas)
PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for .

NE202XX - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE202XX-1.4 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

Stock and price

part
Intel Corporation
Coil wire; single coated enamelled; 2.7mm; 0.2kg; -65÷200°C
TME
DNE2,7-200G
10 In Stock
Qty : 10 units
Unit Price : $7.49
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts