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NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE27200 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

NE27200 Features

* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.2 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE ABSO

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Datasheet Details

Part number
NE27200
Manufacturer
NEC
File Size
39.82 KB
Datasheet
NE27200_NEC.pdf
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC
NEC NE27200-like datasheet