NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NEC

Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

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Datasheet Specifications

Part number: NE27200
Manufacturer: NEC
File Size: 39.82 KB
Datasheet: NE27200_NEC.pdf
Description: C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Features

* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.2 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE ABSO

NE27200 Distributors

📁 Related Datasheet

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NE27200 BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC

NEC NE27200-like datasheet