NE76184AS Datasheet - NEC

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NE76184AS GENERAL PURPOSE L TO X-BAND GaAs MESFET

www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET .
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package.

NE76184AS_NEC.pdf

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Datasheet Details

Part number:

NE76184AS

Manufacturer:

NEC

File Size:

69.76 KB

Description:

GENERAL PURPOSE L TO X-BAND GaAs MESFET

Features

* LOW NOISE FIGURE: 0.8 dB typical at 4 GHz
* HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz
* LG = 1.0 µm, WG = 400 µm
* LOW COST METAL/CERAMIC PACKAGE
* TAPE & REEL PACKAGING OPTION AVAILABLE Optimum Noise Figure, NFOPT (dB) 4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1

Applications

* NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF1 GA1 P1dB PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz Associated Gai

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NE76184AS GENERAL PURPOSE X-BAND GaAs MESFET NEC

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