NE76184AS Datasheet - NEC

NE76184AS GENERAL PURPOSE L TO X-BAND GaAs MESFET

NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. Th.

NE76184AS Features

* LOW NOISE FIGURE: 0.8 dB typical at 4 GHz

* HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz

* LG = 1.0 µm, WG = 400 µm

* LOW COST METAL/CERAMIC PACKAGE

* TAPE & REEL PACKAGING OPTION AVAILABLE Optimum Noise Figure, NFOPT (dB) 4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1

NE76184AS_NEC.pdf