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NE76000 N-CHANNEL GaAs MESFET

NE76000 Description

DATA SHEET GaAs MES FET NE76000 42 55 25 62 200 330 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET .

NE76000 Features

* Low noise figure NF = 1.6 dB TYP. at f = 12 GHz
* High associated gain Ga = 9.0 dB TYP. at f = 12 GHz
* Gate length: Lg = 0.3 Pm
* Gate width: Wg = 280 Pm ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 119 33 t CHIP DIMENSIONS (Unit: Pm) uc 450 57 Prod DRAIN DRAIN Dra

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