NES2527B-30 - 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band.
Internal input matching circuits are designed to optimize performance.
The device has a 0.8 µm gate length for increased linear gain.
technology.
The device incorporates WSi (tungsten silicide
NES2527B-30 Features
* High output power
* High gain
* High power added efficiency
* Internally matched input
* High reliability 2.4 0.1 4.5 MAX 1.8 0.2 MAX QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published
