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NES2527B-30 Datasheet - NEC

NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. technology. The device incorporates WSi (tungsten silicide.

NES2527B-30 Features

* High output power

* High gain

* High power added efficiency

* Internally matched input

* High reliability 2.4 0.1 4.5 MAX 1.8 0.2 MAX QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published

NES2527B-30_NEC.pdf

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Datasheet Details

Part number:

NES2527B-30

Manufacturer:

NEC

File Size:

37.70 KB

Description:

30 w s-band power gaas fet n-channel gaas mes fet.

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TAGS

NES2527B-30 NES2527B-30 S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET NEC

NES2527B-30 Distributor