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NP88N04DHE, NP88N04CHE Datasheet - NEC

NP88N04DHE MOS FIELD EFFECT TRANSISTOR

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E1-AY NP88N04KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PA.

NP88N04DHE Features

* Channel temperature 175 degree rated

* Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)

* Low input capacitance Ciss = 7300 pF TYP.

* Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change

NP88N04CHE_NEC.pdf

This datasheet PDF includes multiple part numbers: NP88N04DHE, NP88N04CHE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

NP88N04DHE, NP88N04CHE

Manufacturer:

NEC

File Size:

284.06 KB

Description:

Mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: NP88N04DHE, NP88N04CHE.
Please refer to the document for exact specifications by model.

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NP88N04DHE NP88N04CHE MOS FIELD EFFECT TRANSISTOR NEC

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