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NP88N04NHE

MOS FIELD EFFECT TRANSISTOR

NP88N04NHE Features

* Channel temperature 175 degree rated

* Super low on-state resistance RDS(on) = 4.3 mĪ© MAX. (VGS = 10 V, ID = 44 A)

* Low input capacitance Ciss = 7300 pF TYP.

* Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change

NP88N04NHE General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E1-AY NP88N04KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PA.

NP88N04NHE Datasheet (284.06 KB)

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Datasheet Details

Part number:

NP88N04NHE

Manufacturer:

NEC

File Size:

284.06 KB

Description:

Mos field effect transistor.
www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL.

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TAGS

NP88N04NHE MOS FIELD EFFECT TRANSISTOR NEC

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