* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.2 MAX. 1.0±0.05 0.25 ° 3° +5
* 3° FEATURES
* 2.5 V drive available
* Low on-state resistance RDS(on)1 = 13.0 mΩ MAX. (VGS
UPA1872B Datasheet (238.47 KB)
UPA1872B
NEC
238.47 KB
N-channel mos field effect transistor for switching.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1872B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PACKAGE DRAWING (Unit: mm.
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