* Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS =
* 10 V, ID =
* 6.5 A) RDS(on)2 = 14.5 mΩ MAX. (VGS =
* 4.5 V, ID =
* 6.5 A)
* Low Ciss: Ciss = 2810 pF TYP.
* Built-in gate protection diode
* Small and surface mount package (Power SO
UPA2718GR Datasheet (138.41 KB)
UPA2718GR
NEC
138.41 KB
Switching n- and p-channel power mos fet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2718GR
SWITCHING P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, .
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