UPA2743T1A

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

* Built-in gate protection diode

* Thin type surface mount package with heat spreader (8-pin HVSON (6051))

* RoHS Compliant ABSOLUTE MAXIMUM RATIN

UPA2743T1A

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N-channel mos field effect transistor.

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UPA2743T1A N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas

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