UPA2756GR SWITCHING N- AND P-CHANNEL POWER MOS FET

NEC

UPA2756GR Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET .
The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications.

UPA2756GR Features

* Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
* Low Ciss: Ciss = 260 pF TYP.
* Built-in G-S protection diode against ESD
* Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44

UPA2756GR Applications

* PACKAGE DRAWING (Unit: mm) 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4 +0.10

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UPA2756GR Datasheet Preview — Preview of UPA2756GR PDF

Datasheet Details

Part number: UPA2756GR
Manufacturer: NEC
File Size: 138.46 KB
Datasheet: UPA2756GR_NEC.pdf
Description: SWITCHING N- AND P-CHANNEL POWER MOS FET

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SWITCHING AND P-CHANNEL POWER MOS FET NEC

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