uPA2757GR

SWITCHING N-CHANNEL POWER MOS FET

Renesas

* Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

* Low gate charge QG = 10 nC TYP. (VGS = 10 V)

* Built-in G-S protection diode

* Small and surface mount package (Power SOP8) PACKAGE DRAWING

uPA2757GR

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Switching n-channel power mos fet.

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uPA2757GR SWITCHING N-CHANNEL POWER MOS FET Renesas

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