uPA2757GR SWITCHING N-CHANNEL POWER MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2757GR SWITCHING N-CHANNEL POWER MOS FET .
The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Low on-state resistance RDS(on)1.

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Datasheet Specifications

Part number: uPA2757GR
Manufacturer: Renesas ↗
File Size: 309.63 KB
Datasheet: uPA2757GR-Renesas.pdf
Description: SWITCHING N-CHANNEL POWER MOS FET

Features

* Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
* Low gate charge QG = 10 nC TYP. (VGS = 10 V)
* Built-in G-S protection diode
* Small and surface mount package (Power SOP8) PACKAGE DRAWING

uPA2757GR Distributors

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uPA2757GR SWITCHING N-CHANNEL POWER MOS FET Renesas

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