uPA2757GR Datasheet, Fet, Renesas

uPA2757GR Features

• Fet
• Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
• Low gate charge QG = 10 nC TYP. (VGS = 10

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uPA2757GR

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Renesas ↗

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📄 Datasheet

Description:

Switching n-channel power mos fet. The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES Low on-state res

TAGS

uPA2757GR

Renesas

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