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UPA621TT - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

2.5 V power source.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Datasheet preview – UPA621TT

Datasheet Details

Part number UPA621TT
Manufacturer NEC
File Size 66.39 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA621TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA621TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A) 0.25 ±0.1 PACKAGE DRAWING (Unit: mm) 2.0 ±0.2 6 54 1 23 1.6 2.1±0.1 0~0.05 0.65 0.65 S MAX. 0.8 0.15 +0.1 −0.05 ORDERING INFORMATION PART NUMBER µPA621TT Marking: WB PACKAGE 6pinWSOF (1620) 0.4 ±0.1 0.
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