Part number:
UPA679TB
Manufacturer:
NEC
File Size:
141.20 KB
Description:
N/p-channel mos field effect transistor for switching.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES
* 2.5 V drive available
* Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω
UPA679TB Datasheet (141.20 KB)
UPA679TB
NEC
141.20 KB
N/p-channel mos field effect transistor for switching.
📁 Related Datasheet
UPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING (NEC)
UPA672T N-CHANNEL MOS FET ARRAY (Renesas)
UPA675T N-Channel MOS Field Effect Transistor (NEC)
UPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING (NEC)
UPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)
UPA678TB P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING (NEC)
UPA67C Mini Printer Driver (NEC)
uPA602CT N-CHANNEL MOSFET (Renesas)
UPA602T N-Channel MOSFET (NEC)
UPA603T P-CHANNEL MOSFET (NEC)