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UPA679TB

N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

UPA679TB Features

* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES

* 2.5 V drive available

* Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω

UPA679TB Datasheet (141.20 KB)

Preview of UPA679TB PDF

Datasheet Details

Part number:

UPA679TB

Manufacturer:

NEC

File Size:

141.20 KB

Description:

N/p-channel mos field effect transistor for switching.

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TAGS

UPA679TB P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING NEC

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