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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA650TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION The µPA650TT is a switching device, which can be driven directly by a
1.8 V power source. This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES • 1.8 V drive available • Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 68 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 114 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)
0.25±0.1
PACKAGE DRAWING (Unit: mm)
2.0±0.2
6 54 1 23
1.6 2.1±0.1
0~0.05
0.65 0.65
S
MAX. 0.8
+0.1 −0.05
0.15
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA650TT
6pinWSOF (1620)
Marking: WD
0.4±0.
UPA650TT Datasheet
