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UPA650TT

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

UPA650TT Features

* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES

* 1.8 V drive available

* Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS =

* 4.5 V, ID =

* 2.5 A) RDS(on)

UPA650TT Datasheet (217.17 KB)

Preview of UPA650TT PDF

Datasheet Details

Part number:

UPA650TT

Manufacturer:

Renesas ↗

File Size:

217.17 KB

Description:

P-channel mos field effect transistor.

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TAGS

UPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas

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