Part number:
UPA650TT
Manufacturer:
File Size:
217.17 KB
Description:
P-channel mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES
* 1.8 V drive available
* Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS =
* 4.5 V, ID =
* 2.5 A) RDS(on)
UPA650TT Datasheet (217.17 KB)
UPA650TT
217.17 KB
P-channel mos field effect transistor.
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