UPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING .
The µPA611TA is a switching device which can be driven directly by a 2.

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Datasheet Specifications

Part number: UPA611TA
Manufacturer: NEC
File Size: 52.55 KB
Datasheet: UPA611TA_NEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Features

* Can be driven by a 2.5-V power source
* Low gate cut-off voltage 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ORDERING INFORMATION PART NUMBER PACKAGE EQUIVALENT CIRCUIT (1/2 Circuit) µPA611TA Drain SC-74 (Mini Mold) Internal Diode Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

UPA611TA Distributors

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UPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING NEC

NEC UPA611TA-like datasheet