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UPA610TA

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

UPA610TA Features

* Can be driven by a 2.5 V power source.

* Low Gate Cut-off Voltage. 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Stor

UPA610TA General Description

The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is 2.8 ±0.2 Package Drawings (unit: mm) 0.65 +0.1

*0.15 0.32 +0.1

*0.05 0.16 +0.1

*0.06 suitable for use as a high-speed switch.

UPA610TA Datasheet (64.19 KB)

Preview of UPA610TA PDF

Datasheet Details

Part number:

UPA610TA

Manufacturer:

NEC

File Size:

64.19 KB

Description:

P-channel mos field effect transistor for high speed switching.

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UPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING NEC

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