UPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING .
The µPA610TA is a switching device which can be driven directly by a 2.

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Datasheet Specifications

Part number: UPA610TA
Manufacturer: NEC
File Size: 64.19 KB
Datasheet: UPA610TA_NEC.pdf
Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Features

* Can be driven by a 2.5 V power source.
* Low Gate Cut-off Voltage. 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Stor

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

UPA610TA Distributors

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UPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING NEC

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