UPA807T NPN Transistor

NEC

Description

DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FE.

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Datasheet Specifications

Part number: UPA807T
Manufacturer: NEC
File Size: 56.88 KB
Datasheet: UPA807T_NEC.pdf
Description: NPN Transistor

Features

* Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
* A Super Mini Mold Package Adopted
* Built-in 2 Transistors (2 × 2SC5179) 2.0±0.2 PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 1.3 ORDERING

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UPA807T NPN Transistor NEC

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