UPA809T NPN Transistor

NEC

Description

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MO.

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Datasheet Specifications

Part number: UPA809T
Manufacturer: NEC
File Size: 66.22 KB
Datasheet: UPA809T_NEC.pdf
Description: NPN Transistor

Features

* Low Voltage Operation, Low Phase Distortion
* Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
* Large Absolute Maximum Collector Current PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 1.3 IC = 100 mA

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UPA809T NPN Transistor NEC

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