* High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e| = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
* 6-pin thin-type small mini mold package
* Built-in 2 transistors (2 u 2SC5179) 2 PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.
UPA827TF
NEC
80.02 KB
High-frequency low noise amplifier npn silicon epitaxial twin transistor.
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
PPA827TF
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u.
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