UPA863TS
NEC
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Npn silicon rf transistor.
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UPA863TD - NPN SILICON RF TRANSISTOR
(CEL)
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μPA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• .
UPA861TD - NECs NPN SILICON RF TWIN TRANSISTOR
(NEC)
NEC's NPN SILICON RF TWIN TRANSISTOR
FEATURES
• • • • • LOW VOLTAGE, LOW CURRENT OPERATION LOW CAPACITANCE FOR WIDE TUNING RANGE SMALL PACKAGE OUTLINE.
UPA862TD - NECs NPN SILICON RF TWIN TRANSISTOR
(NEC)
NEC's NPN SILICON RF TWIN TRANSISTOR
FEATURES
• • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE:
1
.
UPA800T - NPN Transistor
(NEC)
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MI.
UPA800TF - NPN SILICON HIGH FREQUENCY TRANSISTOR
(NEC)
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60.
UPA801T - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for .
UPA801TC - NPN Transistor
(NEC)
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA801TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUP.
UPA802T - NPN Transistor
(NEC)
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MI.
UPA803T - NPN Transistor
(NEC)
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA803T
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
µPA803T has built-in 2 tra.
UPA804TC - NPN Transistor
(NEC)
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA804TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5004) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUP.
