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µPD17134A SUBSERIES
4-BIT SINGLE-CHIP MICROCONTROLLER
µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A
©
1993
Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
UPD17P134A Datasheet
