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UPD17P136A - 4 Bit Microcontroller

Download the UPD17P136A datasheet PDF. This datasheet also covers the UPD variant, as both devices belong to the same 4 bit microcontroller family and are provided as variant models within a single manufacturer datasheet.

General Description

Change of name µPD1713XA to µPD17134A subseries Correction of (2) Program memory write/verify mode in 1.4 PIN CONFIGURATION Change of Figure 3-2 Value of Program Counter after Instruction Partial correction of 3.2.2 On Execution of Branch Instruction (BR) Partial correction of 3.2.3 On During Execut

Key Features

  • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPD-17P137.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
UPD17P132 (UPD17120 - UPD17133) 4-Bit Single-Chip Microcontroller NEC Electronics
UPD17P133 (UPD17120 - UPD17133) 4-Bit Single-Chip Microcontroller NEC Electronics
UPD17P149 4-Bit Microcontroller Renesas
uPD17P23 CMOS MICROCONTROLLER Renesas
UPD17051 4-BIT SINGLE-CHIP MICROCONTROLLER NEC Electronics

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD17P134A 4 Bit Microcontroller
UPD17P135A 4 Bit Microcontroller
UPD17P137A 4 Bit Microcontroller
UPD17P103 4-Bit Single-Chip Microcontroller
UPD17P104 4-Bit Single-Chip Microcontroller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
µPD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17134A µPD17135A µPD17136A µPD17137A µPD17P136A µPD17P137A © 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.