• Part: UPD17P133
  • Manufacturer: NEC
  • Size: 1.15 MB
Download UPD17P133 Datasheet PDF
UPD17P133 page 2
Page 2
UPD17P133 page 3
Page 3

UPD17P133 Description

IEU-835A) Date Published July 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.