NEe Microcomputers, Inc.
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI.
PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD2118 is a single +5V power supply, 16384 word by 1 bit Dynamic MOS RAM.
The IlPD2118 achieves high speed with low power dissipation by the use of single tran sistor dynamic storage cell design and advanced dynamic circuitry.
This circuit design results in the minimizing of current transients typical of dynamic RAMS.
This in turn II results in
UPD2118-2 Features
* Single+5VSupply,±10%Tolerance
* Low Power: 138 mW Max Operating 16 mW Max Standby
* Low VDD Current Transients
* All Inputs, Including Clocks, TTL Compatible
* Non
* Latched Output is Three
* State
* RAS
* Only
* Refresh
* 1
Datasheet Details
UPD2118-2, UPD2118
NEC
520.52 KB
16384 x 1 bit dynamic mos random access memory.
This datasheet PDF includes multiple part numbers: UPD2118-2, UPD2118.
Please refer to the document for exact specifications by model.
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