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UPD4104-1 - 4096 x 1 STATIC NMOS RAM

This page provides the datasheet information for the UPD4104-1, a member of the UPD4104 4096 x 1 STATIC NMOS RAM family.

Datasheet Summary

Features

  • ' . FastAccessTime-200ns (J. LPD4104-2).
  • Very Low Stand-By Power - 28 mW Max.
  • Low VCC Data Retention Mode to +3 Volts.
  • Single +5V ±10% Supply.
  • Fully TTL Compatible.
  • Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages.
  • '3 Performance Ranges: II jlPD4104 jlPD4104-1 jlPD4104-2 ACCESS TIME 300 ns 250 ns 200 ns.

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Datasheet preview – UPD4104-1

Datasheet Details

Part number UPD4104-1
Manufacturer NEC
File Size 318.50 KB
Description 4096 x 1 STATIC NMOS RAM
Datasheet download datasheet UPD4104-1 Datasheet
Additional preview pages of the UPD4104-1 datasheet.

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Full PDF Text Transcription

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NEe Microcomputers, Inc. NEe p.PD4104 p.PD41 04·1 pPD41 04·2 4096 x 1 STATIC NMOS RAM DEseR IPTION The J.LPD4104 is a high performance 4K static RAM. Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve high speed and low power in the same device. Utilizing NMOS technology, the J.LPD4104 is fully TTL compatible and operates with a single +5V ± 10% supply. FEATURES ' . FastAccessTime-200ns (J.LPD4104-2) • Very Low Stand-By Power - 28 mW Max. • Low VCC Data Retention Mode to +3 Volts. • Single +5V ±10% Supply. • Fully TTL Compatible. • Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages. • '3 Performance Ranges: II jlPD4104 jlPD4104-1 jlPD4104-2 ACCESS TIME 300 ns 250 ns 200 ns RIWCYCLE 4S0 ns .
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