UPD416-1 Datasheet - NEC

UPD416-1 16384 x 1 Bit DYNAMIC NMOS RAM

NEe Microcomputers, Inc. 18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. PD416 1 f' PD416 2 f'PD416 3 J.L PD416 5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM. It is designed for memory applications where very low cost and large bit storage are important design objectives. The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance. The use of dynamic.

UPD416-1 Datasheet (517.43 KB)