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UPD4564323 64M-bit Synchronous DRAM 4-bank/ LVTTL

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Description

DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 64M-bit Synchronous DRAM 4-bank, LVTTL for Rev.E .
The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks.

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Datasheet Specifications

Part number
UPD4564323
Manufacturer
NEC
File Size
1.02 MB
Datasheet
UPD4564323_NEC.pdf
Description
64M-bit Synchronous DRAM 4-bank/ LVTTL

Features

* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
* Pulsed interface
* Possible to assert random column address in every cycle
* Quad internal banks controlled by BA0 and BA1 (Bank Select)
* ×32 organization
* Byte c

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