UPD4564323 64M-bit Synchronous DRAM 4-bank/ LVTTL

NEC

Description

DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 64M-bit Synchronous DRAM 4-bank, LVTTL for Rev.E .
The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks.

📥 Download Datasheet

UPD4564323 Datasheet Preview — Preview of UPD4564323 PDF

Datasheet Specifications

Part number: UPD4564323
Manufacturer: NEC
File Size: 1.02 MB
Datasheet: UPD4564323_NEC.pdf
Description: 64M-bit Synchronous DRAM 4-bank/ LVTTL

Features

* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
* Pulsed interface
* Possible to assert random column address in every cycle
* Quad internal banks controlled by BA0 and BA1 (Bank Select)
* ×32 organization
* Byte c

UPD4564323 Distributors

📁 Related Datasheet

UPD4564163 - (UPD4564841/441/163) 64M-bit SDRAM (Elpida Memory)
UPD4564441 - (UPD4564841/441/163) 64M-bit SDRAM (Elpida Memory)
UPD4564841 - (UPD4564841/441/163) 64M-bit SDRAM (Elpida Memory)
UPD4503B - Hex 2 State Buffer (ETC)
UPD4516161D - 16M Bit Synchronous DRAM (Elpida)
UPD458 - Fully Decoded 8192-Bit Electrically Erasable and Programmable ROM (NEC Electronics)

📌 All Tags

64M-bit Synchronous DRAM 4-bank LVTTL NEC

NEC UPD4564323-like datasheet