Part number:
uPA1916
Manufacturer:
NEC
File Size:
112.42 KB
Description:
P-channel mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES
* 1.8 V drive available
* Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS =
* 4.5 V, ID =
* 2.5 A) RDS(on)
uPA1916
NEC
112.42 KB
P-channel mos field effect transistor.
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