Datasheet Details
Part number:
P1006BD, P1006BD-NIKO
Manufacturer:
NIKO-SEM
File Size:
346.98 KB
Description:
N-channel enhancement mode field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: P1006BD, P1006BD-NIKO.
Please refer to the document for exact specifications by model.
P1006BD, P1006BD-NIKO, N-Channel Enhancement Mode Field Effect Transistor
NIKO-SEM N-Channel Enhancement Mode P1006BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 66A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.1mH TC = 25 ° C TC =
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