P3506ETF Datasheet - NIKO-SEM

P3506ETF P-Channel Field Effect Transistor

NIKO-SEM P-Channel Enhancement Mode P3506ETF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -20A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = .

P3506ETF Datasheet (158.96 KB)