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P3506DTF Datasheet - UNIKC

P3506DTF P-Channel MOSFET

P3506DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = -10V ID -20A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -10 -100 Avalanche Current IAS -38 Avalanche Energy L = 0.1mH EAS 72 Power Dissipation TC = 25 °C PD TC = 100 °C .

P3506DTF Datasheet (349.37 KB)