P3503EVG Datasheet - UNIKC

P3503EVG P-Channel MOSFET

P3503EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 35mΩ @VGS = -10V ID -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -8 -7 -30 Power Dissipation TC = 25 °C TC = 70 °C PD 2.5 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 15.

P3503EVG Datasheet (457.14 KB)