P3506DD Datasheet - UNIKC

P3506DD P-Channel MOSFET

P3506DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = -10V ID -26A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -26 -16 -100 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -39 77 Power Dissipation TC = 25 °C TC = 100 °C PD 42 17 .

P3506DD Datasheet (472.72 KB)