P3504BD Datasheet - UNIKC

P3504BD N-Channel MOSFET

P3504BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 40mΩ @VGS = 10V ID 20A TO-252 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 100% UIS tested PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 V Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C L = 0.1mH ID IDM IAS EAS 20 16 A 60 20 20 mJ Power Dissipation TC =.

P3504BD Datasheet (480.13 KB)