P3506DT Datasheet - UNIKC

P3506DT P-Channel MOSFET

P3506DT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = 10V ID -40A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -40 -25 -150 Avalanche Current Avalanche Energy2 IAS -40 L = 0.1mH EAS 80 Power Dissipation TC = 25 °C PD 104 TC = 100 °.

P3506DT Datasheet (501.36 KB)